Rapid preparation of CdSe thin-film solar cellsThe silicon-based tandem solar cell is regarded as th
Rapid preparation of CdSe thin-film solar cells
The silicon-based tandem solar cell is regarded as the most promising strategy to break the theoretical efficiency limit of single-junction Si solar cells. With Si-based tandem solar cells as the bottom cells, the optimal bandgap of top cells is 1.7 eV, which enables high efficiency of ~45% for two-junction tandem solar cells. III-V semiconductors/Si and perovskites/Si tandem solar cells have achieved high efficiency levels of ~30%, proving their feasibility. However, the stability challenges of perovskite and the high-cost problem of III-V semiconductors largely limit their wide applications. Exploring new stable, low-cost, and bandgap 1.7 eV photovoltaic materials is of great significance in science and broad prospects in technology.
Cadmium selenide (CdSe), a binary II-VI semiconductor, enjoys great potential in the application of Si-based tandemsolar cells because of the suitable bandgap of ~1.7 eV, excellent optoelectronic properties, high stability, and low manufacturing cost. Nevertheless, the progress of CdSe thin-film solar cells remains as it was 30 years ago, and there are few systematic studies on CdSe thin-film solar cells in recent years.
Professor Tang Jiang and his team have proposed a method of rapid thermal evaporation (RTE) to obtain high-quality CdSe thin films and have designed CdSe thin-film solar cells. This study, entitled Rapid thermal evaporation for cadmium selenide thin-film solar cells, was published in Frontiers of Optoelectronics on Dec. 6, 2021.
