Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet l
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air disinfection, medicine and biochemistry. Therefore, achieving a high-quality epitaxy of AlN films is of particular importance to ensure the excellent performance of DUV photoelectric devices.
Currently, due to the lack of cost-effective homogenous substrates, the optimal choice to grow AlN films is usually to perform heteroepitaxial growth on sapphire. Unfortunately, the inherent mismatches between AlN and sapphire substrate inevitably introduce a variety of crystalline defects into the AlN epilayer. In particular, the large residual strain in the AlN film leads to the nonuniformity of the Al distribution in the upper AlGaN layer accompanied by wafer bending, which severely limits the device performance. Therefore, a feasible strategy is required to make a qualitative leap to realize high-quality growth of heteroepitaxial AlN films and to meet the application requirements of DUV optoelectronic devices.
