#light emitting diodes

UCLA materials scientists and colleagues have discovered that perovskites, a class of promising materials that could be used for low-cost, high-performance solar cells and LEDs, have a previously unutilized molecular component that can further tune the electronic property of perovskites.

Named after Russian mineralogist Lev Perovski, perovskite materials have a crystal-lattice structure of inorganic molecules like that of ceramics, along with organic molecules that are interlaced throughout. Up to now, these organic molecules appeared to only serve a structural function and could not directly contribute to perovskites’ electronic performance.

Led by UCLA, a new study shows that when the organic molecules are designed properly, they not only can maintain the crystal lattice structure, but also contribute to the materials’ electronic properties. This discovery opens up new possibilities to improve the design of materials that will lead to better solar cells and LEDs. The study detailing the research was recently published in Science.

The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air disinfection, medicine and biochemistry. Therefore, achieving a high-quality epitaxy of AlN films is of particular importance to ensure the excellent performance of DUV photoelectric devices.

Currently, due to the lack of cost-effective homogenous substrates, the optimal choice to grow AlN films is usually to perform heteroepitaxial growth on sapphire. Unfortunately, the inherent mismatches between AlN and sapphire substrate inevitably introduce a variety of crystalline defects into the AlN epilayer. In particular, the large residual strain in the AlN film leads to the nonuniformity of the Al distribution in the upper AlGaN layer accompanied by wafer bending, which severely limits the device performance. Therefore, a feasible strategy is required to make a qualitative leap to realize high-quality growth of heteroepitaxial AlN films and to meet the application requirements of DUV optoelectronic devices.

Researchers at the U.S. Naval Research Laboratory (NRL) Center for Computational Materials Science, working with an international team of physicists, have revealed that nanocrystals made of cesium lead halide perovskites (CsPbX3), is the first discovered material which the ground exciton state is “bright,” making it an attractive candidate for more efficient solid-state lasers and light emitting diodes (LEDs).

“The discovery of such material, and understanding of the nature of the existence of the ground bright exciton, open the way for the discovery of other semiconductor structures with bright ground excitons,” said Dr. Alexander Efros, research physicist, NRL. “An optically active bright exciton in this material emits light much faster than in conventional light emitting materials and enables larger power, lower energy use, and faster switching for communication and sensors.”

The work, which was partially sponsored by the Office of Naval Research through a program managed by Dr. Chagaan Baatar, studied lead halide perovskites with three different compositions, including chlorine, bromine, and iodine. Nanocrystals made of these compounds and their alloys can be tuned to emit light at wavelengths that span the entire visible range, while retaining the fast light emission that gives them their superior performance.

Today, it is widely accepted that the large Auger coefficient is the main cause for the large (~50%) efficiency droop in traditional hexagonal-phase InGaAlN LEDs. Yet, this explanation is inadequate to account for the low efficiency droop in gallium arsenide- and gallium phosphide-based LEDs, as those have similar Auger coefficients.

InIEEE Transactions on Electron Devices, Can Bayram, Jean-Pierre Leburton and Yi-Chia Tsai at the University of Illinois at Urbana-Champaign show that the coexistence of strong internal polarization and large carrier effective mass  accounts for ~51% of the efficiency droop under high current densities in hexagonal-phase green InGaAlN LEDs (h-LEDs) compared to cubic-phase InGaAlN green LEDs (c-LEDs).