#indium gallium aluminum nitride
Going cubic halves the efficiency droop in InGaAlN light-emitting diodes
Today, it is widely accepted that the large Auger coefficient is the main cause for the large (~50%) efficiency droop in traditional hexagonal-phase InGaAlN LEDs. Yet, this explanation is inadequate to account for the low efficiency droop in gallium arsenide- and gallium phosphide-based LEDs, as those have similar Auger coefficients.
InIEEE Transactions on Electron Devices, Can Bayram, Jean-Pierre Leburton and Yi-Chia Tsai at the University of Illinois at Urbana-Champaign show that the coexistence of strong internal polarization and large carrier effective mass accounts for ~51% of the efficiency droop under high current densities in hexagonal-phase green InGaAlN LEDs (h-LEDs) compared to cubic-phase InGaAlN green LEDs (c-LEDs).
Post link
